 English |
|
|
|
|
|
|
|
| HMBT9014 Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
| |||
|
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200212
Issued Date : 2002.07.01
Revised Date : 2004.09.08
Page No. : 1/5
HMBT9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT9014 is designed for use in pre-amplifier of low level and low noise.
Features
⢠High Total Power Dissipation (PD: 225mW)
⢠Complementary to HMBT9015
⢠High hFE and Good Linearity
SOT-23
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
⢠Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 50 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 45 V
VEBO Emitter to Base Voltage ................................................................................................................................ 5 V
IC Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Cob
fT
Min.
50
45
5
-
-
-
-
0.58
100
-
150
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
2.20
270
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
Classification on hFE
Rank (Marking Code)
Range
B (C4B)
100-300
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
C (C4C)
200-600
D (C4D)
400-1000
HMBT9014
HSMC Product Specification
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese