HMBT8599 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8599
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor
Spec. No. : HE6811
Issued Date : 1997.12.31
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -80 V
VCEO Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
BVCEO
-80
-
BVEBO
5
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
-600
-
*hFE1
100
-
*hFE2
100
-
*hFE3
75
-
fT
150
-
Cob
-
-
Max.
-
-
-
-100
-100
-100
-400
-300
-800
300
-
-
-
4.5
Unit
Test Conditions
V
V
V
nA
nA
nA
mV
mV
mV
MHz
pF
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-80V
VCE=-60V
VEB=-4V
IC=-100mA, IB=-5mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT8599
HSMC Product Specification