HMBT8099 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8099
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor
Spec. No. : HE6826
Issued Date : 1993.10.27
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
80
-
BVCEO
80
-
BVEBO
6
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
600
-
*hFE1
100
-
*hFE2
100
-
*hFE3
75
-
fT
150
-
Cob
-
-
Max.
-
-
-
100
100
100
400
300
800
300
-
-
-
6
Unit
Test Conditions
V
IC=100uA
V
IC=10mA
V
IE=10uA
nA VCB=80V
nA VCE=60V
nA VEB=6V
mV IC=100mA, IB=5mA
mV IC=100mA, IB=10mA
mV VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
pF VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT8099
HSMC Product Specification