HMBT8050 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8050
NPN EPITAXIAL TRANSISTOR
Description
The HMBT8050 is designed for general purpose amplifier
applications.
Features
• High DC Current hFE=150-400 at IC=150mA
• Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
25
-
BVCEO
20
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE
150
-
fT
150
-
Cob
-
-
Classification Of hFE
Max.
-
-
-
1
500
1
500
-
10
Unit
Test Conditions
V
V
V
uA
mV
V
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V. IE=0
IC=500mA, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
D9D
150-300
D9E
250-500
HMBT8050
HSMC Product Specification