HMBT6520 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6806
Issued Date : 1996.04.10
Revised Date : 2002.11.29
Page No. : 1/3
HMBT6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The HMBT6520 is complementary to HMBT6517
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ................................................................................................. -350 V
VCEO Collector to Emitter Voltage .............................................................................................. -350 V
VEBO Emitter to Base Voltage ........................................................................................................ -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-350
-
-
V
IC=-100uA
BVCEO
-350
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-10uA
ICBO
-
-
-50
nA
VCB=-250V
IEBO
-
-
-50
nA
VEB=-4V
*VCE(sat)1
-
-
-300
mV IC=-10mA, IB=-1mA
*VCE(sat)2
-
-
-350
mV IC=-20mA, IB=-2mA
*VCE(sat)3
-
-
-500
mV IC=-30mA, IB=-3mA
*VCE(sat)4
-
-
-1
V
IC=-50mA, IB=-5mA
VBE(on)
-
-
-2
V
VCE=-10V, IC=-100mA
*VBE(sat)1
-
-
-750
mV IB=-1mA, IC=-10mA
*VBE(sat)2
-
-
-850
mV IB=-2mA, IC=-20mA
*VBE(sat)3
-
-
-900
mV IB=-3mA, IC=-30mA
*hFE1
20
-
-
VCE=-10V, IC=-1mA
*hFE2
30
-
-
VCE=-10V, IC=-10mA
*hFE3
30
-
200
VCE=-10V, IC=-30mA
*hFE4
20
-
200
VCE=-10V, IC=-50mA
*HFE5
15
-
-
VCE=-10V, IC=-100mA
fT
40
-
200
MHz VCE=-20V ,IC=-10mA, f=20MHz
Cob
-
-
6
pF
VCB=-20V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6520
HSMC Product Specification