HMBT6517 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 1/3
HMBT6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The HMBT6517 is complementary to HMBT6520
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ................................................................................................... 350 V
VCEO Collector to Emitter Voltage ................................................................................................ 350 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
350
-
-
V
IC=100uA
BVCEO
350
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=10uA
ICBO
-
-
50
nA
VCB=250V
IEBO
-
-
50
nA
VEB=5V
*VCE(sat)1
-
-
300
mV IC=10mA, IB=1mA
*VCE(sat)2
-
-
350
mV IC=20mA, IB=2mA
*VCE(sat)3
-
-
500
mV IC=30mA, IB=3mA
*VCE(sat)4
-
-
1
V
IC=50mA, IB=5mA
VBE(on)
-
-
2
V
VCE=10V, IC=100mA
*VBE(sat)1
-
-
750
mV IB=1mA, IC=10mA
*VBE(sat)2
-
-
850
mV IB=2mA, IC=20mA
*VBE(sat)3
-
-
900
mV IB=3mA, IC=30mA
*hFE1
20
-
-
VCE=10V, IC=1mA
*hFE2
30
-
-
VCE=10V, IC=10mA
*hFE3
30
-
200
VCE=10V, IC=30mA
*hFE4
20
-
200
VCE=10V, IC=50mA
*hFE5
15
-
-
VCE=10V, IC=100mA
fT
40
-
200
MHz IC=10mA, VCE=20V, f=20MHz
Cob
-
-
6
pF
VCB=20V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6517
HSMC Product Specification