HMBT6429 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6429
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor
Spec. No. : HE6810
Issued Date : 1998.07.01
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 55 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
55
-
BVCEO
45
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
560
-
*hFE1
500
-
*hFE2
500
-
*hFE3
500
-
*hFE4
500
-
fT
100
-
Cob
-
-
Max.
-
-
10
100
10
200
600
660
-
1250
-
-
700
3.0
Unit
Test Conditions
V
V
nA
nA
nA
mV
mV
mV
MHz
pF
IC=100uA
IC=1mA
VCB=30V
VCE=30V
VEB=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=0.01mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6429
HSMC Product Specification