HMBT6427 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Spec. No. : HE6846
Issued Date : 1995.07.21
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
40
-
BVEBO
12
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
VBE(on)
-
-
*hFE1
10
-
*hFE2
20
-
*hFE3
14
-
Cob
-
-
Max.
-
-
-
50
1
50
1.2
1.5
2
1.75
100
200
140
7
Unit
Test Conditions
V
IC=100uA
V
IC=10mA
V
IE=10uA
nA VCB=30V
uA VCB=25V
nA VEB=10V
V
IC=50mA, IB=0.5mA
V
IC=500mA, IB=0.5mA
V
IC=500mA, IB=0.5mA
V
VCE=5V, IC=50mA
K
VCE=5V, IC=10mA
K
VCE=5V, IC=100mA
K
VCE=5V, IC=500mA
pF VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6427
HSMC Product Specification