HMBT5551 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages )

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5551 is designed for general purpose applications
requiring high Breakdown Voltages.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ............................................................................................. -55 + 150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
180
-
BVCEO
160
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
80
-
*hFE2
80
-
*hFE3
30
-
fT
100
-
Cob
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
250
-
300
6
Unit
Test Conditions
V
V
V
nA
nA
V
V
V
V
MHz
pF
IC=100uA
IC=1.0mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT5551
HSMC Product Specification