HMBT5086 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6849
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5086
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5086 is designed for low noise , high gain , general
purpose amplifier applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage ..................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................. -3 V
IC Collector Current......................................................................................................... -50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-50
-
BVCEO
-50
-
BVEBO
-3
-
ICBO1
-
-
ICBO2
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
150
-
*hFE2
150
-
*hFE3
150
-
fT
40
-
Cob
-
-
Max.
-
-
-
-10
-50
-300
-850
500
-
-
-
4.0
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
MHz
pF
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-10V
VCB=-35V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-0.5mA, f=100MHz
VCB=-5V, f=100KHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT5086
HSMC Product Specification