HMBT4401 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6815
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
HMBT4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4401 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6
-
ICEX
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
20
-
*hFE2
40
-
*hFE3
80
-
*hFE4
100
-
*hFE5
40
-
fT
250
-
Cob
-
-
Max.
-
-
-
100
0.4
750
950
1.2
-
-
-
300
-
-
6.5
Unit
Test Conditions
V
V
V
nA
V
mV
mV
V
MHz
PF
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE=-0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT4401
HSMC Product Specification