HMBT4125 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/2
HMBT4125
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4125 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ............................................................................................ -65 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -30 V
VCEO Collector to Emitter Voltage ..................................................................................... -30 V
VEBO Emitter to Base Voltage .......................................................................................... -4.0 V
IC Collector Current....................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-30
-
BVCEO
-30
-
BVEBO
-4
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
50
-
*hFE2
25
-
fT
200
-
Cob
-
-
Max.
-
-
-
-50
-50
-0.4
-950
150
-
-
4.5
Unit
Test Conditions
V
V
V
nA
nA
V
mV
MHz
pF
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VBE=-3V
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT4125
HSMC Product Specification