HMBT4124 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6859
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 1/3
HMBT4124
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4124 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 25 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
30
-
BVCEO
25
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
120
-
*hFE2
60
-
fT
300
-
Cob
-
-
Max.
-
-
-
50
50
300
950
360
-
-
4
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V
VEB=3V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=1V, IC=2mA
VCE=1V, IC=50mA
VCE=20V, IC=10mA, f=1MHz
VCB=5V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT4124
HSMC Product Specification