HMBT3906 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6820
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/3
HMBT3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT3906 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -40 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-0.2
-
-0.84
-
-
-
-
-
-
-
Max.
-
-
-
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
Unit
Test Conditions
V
V
V
nA
V
V
V
V
MHz
pF
IC=-10uA
IC=-1mA
IC=-10uA
VCE=-30V, VBE=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT3906
HSMC Product Specification