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| HMBT28S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 1/4
HMBT28S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
Features
⢠Excellent hFE Linearity
⢠High DC Current Gain
⢠High Power Dissipation
SOT-23
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
⢠Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 40 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V
VEBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current .......................................................................................................................................... 1.25 A
IB Base Current .................................................................................................................................................. 0.4 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
hFE3
hFE4
fT
Cob
Min.
40
20
6
-
-
-
290
300
300
300
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
9
Max.
-
-
-
100
100
0.55
-
1000
-
-
-
-
Classification of hFE2
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
IC=600mA, IB=20mA
VCE=1V, IC=1mA
VCE=1V, IC=0.1A
VCE=1V, IC=0.3A
VCE=1V, IC=0.5A
VCE=10V, IC=50mA, f=1MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
Rank (Marking Code)
Range
B (3FB)
300-550
C (3FC)
500-700
D (3FD)
650-1000
HM28S
HSMC Product Specification
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