HMBT2484 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2484
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low Noise Transistor.
Spec. No. : HE6847
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current.......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
60
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
250
-
*hFE2
-
-
Cob
-
-
Max.
-
-
-
10
10
350
0.95
-
800
6
Unit
Test Conditions
V
IC=10uA
V
IC=1mA
V
IE=10uA
nA VCB=45V
nA VEB=5V
mV IC=1mA, IB=0.1mA
V
IC=1mA, VCE=5V
VCE=5V, IC=1mA
VCE=5V, IC=10mA
pF VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT2484
HSMC Product Specification