HMBT1015 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
HMBT1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1015 is designed for use in driver stage of AF amplifier and
general purpose amplification.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-50
-
BVCEO
-50
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
120
-
*hFE2
25
-
fT
80
-
Cob
-
-
Max.
-
-
-
-100
-100
-300
-1.1
700
-
-
7
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-50V
VEB=-5V
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
A4Y
120-240
A4G
200-400
A4B
350-700
HMBT1015
HSMC Product Specification