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| HMBD914_04 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – HIGH-SPEED SWITCHING DIODE | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HMBD914
HIGH-SPEED SWITCHING DIODE
Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2004.09.01
Page No. : 1/4
Description
The HMBD914 is designed for high-speed switching application in hybrid thick-and
thin-film circuits. The device is manufactured by the silicon epitaxial planar process Diagram:
and packed in plastic surface mount package.
SOT-23
Features
⢠Small SMD Package (SOT-23)
⢠Ultra-high Speed
⢠Low Forward Voltage
⢠Fast Reverse Recovery Time
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -65 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 250 mW
⢠Maximum Voltages and Currents (TA=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 85 V
VR Coinuous Reverse Voltage ............................................................................................................................ 70 V
IF Continuous Forward Current ...................................................................................................................... 200 mA
IFSM Peak Forward Surge Current .................................................................................................................. 500 mA
IFSM Non-Repetitive Peak Forward Current t=1uS ................................................................................................. 4 A
IFSM Non-Repetitive Peak Forward Current t=1mS ................................................................................................ 1 A
IFSM Non-Repetitive Peak Forward Current t=1S ................................................................................................ 0.5 A
Electrical Characteristics (TA=25°C)
Characteristic
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
Condition
Min Max Unit
VF
IF=10mA
VR
IR=100uA
IR(1)
VR=25V
IR(2)
VR=75V
Cd
VR=0, F=1MHz
-
1
V
100
V
-
25
nA
-
5
uA
-
1.5
pF
Trr
IF=IR=10mA, RL=100â¦, Measured
at IR=1mA
-
4
ns
HMBD914
HSMC Product Specification
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