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HMBD4148_04 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – HIGH-SPEED SWITCHING DIODE
HI-SINCERITY
MICROELECTRONICS CORP.
HMBD4148
HIGH-SPEED SWITCHING DIODE
Spec. No. : HE6802
Issued Date : 1995.12.09
Revised Date : 2004.09.01
Page No. : 1/3
Description
SOT-23
The HMBD4148 is designed for high-speed switching application in hybrid thick-and
thin-film circuits. The devices is manufactured by the silicon epitaxial planar process Diagram:
and packed in plastic surface mount package.
Features
• Small SMD Package (SOT-23)
• Ultra-high Speed
• Low Forward Voltage
• Fast Reverse Recovery Time
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -65 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
• Maximum Voltages and Currents (TA=25°C)
Continuous Reverse Voltage .............................................................................................................................. 70 V
Continuous Forward Current ......................................................................................................................... 200 mA
Peak Forward Surge Current......................................................................................................................... 500 mA
Electrical Characteristics (TA=25°C)
Characteristic
Forward Voltage
Reverse Breakdown
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
Condition
Min Max Unit
VF
IF=10mA
-
1
V
VR
IR=100uA
100
-
V
IR
VR=75V
-
5
uA
CT
VR=0, F=1MHz
-
4
pF
Trr
IF=IR=10mA, RL=100Ω, Measured
at IR=1mA
-
4
nS
HMBD4148
HSMC Product Specification
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