HMBD4148 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – HIGH-SPEED SWITCHING DIODE

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6802
Issued Date : 1995.12.09
Revised Date : 2002.10.25
Page No. : 1/2
HMBD4148
HIGH-SPEED SWITCHING DIODE
Description
The HMBD4148 is designed for high-speed switching application in hybrid
thick-and thin-film circuits. The devices is manufactured by the silicon
epitaxial planar process and packed in plastic surface mount package.
Features
• Small SMD Package (SOT-23)
• Ultra-high Speed
• Low Forward Voltage
• Fast Reverse Recovery Time
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................ -65 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 225 mW
• Maximum Voltages and Currents (Ta=25°C)
Continuous Reverse Voltage .......................................................................................................... 70 V
Continuous Forward Current....................................................................................................... 200 mA
Peak Forward Surge Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Characteristic
Forward Voltage
Reverse Breakdown
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
VF
VR
IR
CT
Trr
Condition
IF=10mA
IR=100uA
VR=75V
VR=0, F=1MHz
IF=IR=10mA, RL=100Ω
Measured at IR=1mA
Min Max Unit
-
1
V
100
-
V
-
5
uA
-
4
pF
-
4
nS
HMBD4148
HSMC Product Specification