HM965 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9511
Issued Date : 1996.04.12
Revised Date : 2002.10.01
Page No. : 1/3
HM965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM965 is designed for use as AF output amplifier and glash unit.
Features
• Low VCE(sat)
• High performance at low supply voltage
SOT-89
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.2 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 20 V
BVEBO Emitter to Base Voltage............................................................................................ 7 V
IC Collector Current (Continuous) ......................................................................................... 5 A
IC Collector Current (Peak PT=10mS) .................................................................................. 8 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
20
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.35
*hFE1
340
-
*hFE2
150
-
fT
-
150
Cob
-
-
Classifications Of hFE1
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Unit
Test Conditions
V
V
V
uA
uA
V
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=10V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
R
340-600
S
560-800
HM965
HSMC Product Specification