HM94 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9525-B
Issued Date : 1998.01.06
Revised Date : 2000.10.01
Page No. : 1/3
HM94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM94 is designed for application requires high voltage.
Features
• High voltage: VCEO=400V(min) at IC=1mA
• High current gain: IC=300mA at 25°C
• Complementary with HM44
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................. -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage .................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-400
-
BVCEO
-400
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
ICES
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VCE(sat)3
-
-
*VBE(sat)
-
-
*hFE1
40
-
*hFE2
50
-
*hFE3
45
-
*hFE4
40
-
Max.
-
-
-
-100
-100
-500
-350
-500
-750
-750
-
300
-
-
Unit
Test Conditions
V
IC=-100uA
V
IC=-1mA
V
IE=-10uA
nA VCB=-400V
nA VEB=-6V
nA VCE=-400V, VBE=0
mV IC=-1mA, IB=-0.1mA
mV IC=-10mA, IB=-1mA
mV IC=-50mA, IB=-5mA
mV IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification