HM92M Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9516-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM92M
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM92M is designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics telephone.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -300 V
VCEO Collector to Emitter Voltage .................................................................................. -300 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-300
-
BVCEO
-300
-
BVEBO
-5
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
80
-
*hFE2
80
-
*hFE3
40
-
fT
50
-
Cob
-
-
Max.
-
-
-
-5
-100
-700
-900
-1
-
-
-
-
8
Unit
Test Conditions
V
V
V
uA
nA
mV
mV
V
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCE=-300V, IB=0
VEB=-3V
IC=-100mA, IB=-10mA
IC=-20mA, IB=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-100mA
VCE=10V, IC=-200mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification