HM772A Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.12.01
Revised Date : 2001.01.01
Page No. : 1/3
HM772A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM772A is designed for use in output stage of amplifier, voltage
regulator, DC-DC converter and driver.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ........................................................................................1 W (Note1)
Total Power Dissipation (Ta=25°C)........................................................................................ 2 W (Note2)
Total Power Dissipation (Ta=25°C)..................................................................................... 1.5 W (Note3)
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -60 V
VCEO Collector to Emitter Voltage................................................................................................. -50 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current (continuous) ..................................................................................................... -3 A
IC Collector Current (pulse) ................................................................................................. -7 A (Note4)
Note1: When tested in free air condition, without heat sinking.
Note2: When mounted on a 40X40X1mm ceramic board.
Note3: Printed circuit board 2mm thick, collector plating 1cm square or larger.
Note4: Single pulse PW=1ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-60
-
BVCEO
-50
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-0.3
*VBE(sat)
-
-1
*hFE1
30
-
*hFE2
100
160
fT
-
80
Cob
-
55
Classification Of hFE2
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-100mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
100-200
P
160-320
E
250-500
HSMC Product Specification