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| HM669A Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HM669A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HM200205
Issued Date : 1995.12.18
Revised Date : 2004.09.16
Page No. : 1/4
Description
Low frequency power amplifier complementary pair with HM649A
Absolute Maximum Ratings (TA=25°C)
SOT-89
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ....................................................................................................................+150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 160 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current (DC) ................................................................................................................................... 1.5 A
IC Collector Current (Pulse) ................................................................................................................................... 3 A
Thermal Characteristic
Symbol
Rθja
Rθjc
Characteristic
Thermal Resistance, junction to ambient (TA=25oC)
Thermal Resistance, junction to case (TC=25oC)
Max.
125
12.5
Unit
oC/W
oC/W
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
Typ.
Max.
180
-
-
160
-
-
5
-
-
-
-
10
-
-
1
-
-
1.5
100
-
320
30
-
-
-
140
-
Unit
V
V
V
uA
V
V
MHz
Classification Of hFE1
Rank
Range
C
100-200
D
180-320
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
IC=500mA, IB=50mA
IC=150mA, VCE=5V
IC=150mA, VCE=5V
IC=500mA, VCE=5V
IC=150mA , VCE=5V
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HM669A
HSMC Product Specification
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