HM64 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9512
Issued Date : 1996.04.17
Revised Date : 2001.09.20
Page No. : 1/3
HM64
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM64 is a darlington amplifier transistor designed for
applications requiring extremely high current gain.
Features
• High D.C current gain
• HM64 is complementary to HM14
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -30 V
VCES Collector to Emitter Voltage ..................................................................................... -30 V
VEBO Emitter to Base Voltage ........................................................................................... -10 V
IC Collector Current ...................................................................................................... -300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-30
-
BVCES
-30
-
BVEBO
-10
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
10
-
*hFE2
20
-
fT
125
-
Max.
-
-
-
-100
-100
-1.5
-2
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
K
K
MHz
IC=-100uA
IC=-100uA
IE=-10uA
VCB=-30V
VEB=-10V
IC=-100mA, IB=-0.1mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HM64
HSMC Product Specification