HM5551 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9507
Issued Date : 1996.04.09
Revised Date : 2002.02.20
Page No. : 1/3
HM5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM5551 is designed for general purpose applications requiring
high breakdown voltages.
Features
• High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)
• Complements to PNP type HM5401
SOT-89
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 180 V
VCES Collector to Emitter Voltage .................................................................................... 160 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
180
-
BVCEO
160
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
80
-
*hFE2
80
-
*hFE3
30
-
fT
100
-
Cob
-
-
Max.
-
-
-
50
50
150
200
1
1
-
250
-
300
6
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HM5551
HSMC Product Specification