HM44 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9524-B
Issued Date : 1998.01.06
Revised Date : 2000.10.01
Page No. : 1/3
HM44
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM44 is designed for application requires high voltage.
Features
• High voltage: VCEO=400V(min) at IC=1mA
• High current gain: IC=300mA at 25°C
• Complementary with HM94
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 400 V
VCEO Collector to Emitter Voltage ................................................................................... 400 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
400
-
BVCEO
400
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
ICES
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
40
-
*hFE2
50
-
*hFE3
45
-
*hFE4
40
-
Cob
-
4
Max.
-
-
-
100
100
500
375
750
750
-
300
-
-
6
Unit
Test Conditions
V
IC=100uA
V
IC=1mA
V
IE=10uA
nA VCB=400V
nA VEB=4V
nA VCE=400V
mV IC=20mA, IB=2mA
mV IC=50mA, IB=5mA
mV IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
pF VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification