HM42 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9510-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM42
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM42 is designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics telephone.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 300 V
VCEO Collector to Emitter Voltage ................................................................................... 300 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
300
-
BVCEO
300
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
25
-
*hFE2
40
-
*hFE3
40
-
fT
50
-
Cob
-
3
Max.
-
-
-
100
100
500
900
-
-
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=260V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification