HM3906 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9506-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM3906 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -40 V
VCEO Collector to Emitter Voltage .................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-40
-
BVCEO
-40
-
BVEBO
-5
-
ICEX
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1 -650
-
*VBE(sat)2
-
-
*hFE1
60
-
*hFE2
80
-
*hFE3
100
-
*hFE4
60
-
*hFE5
30
-
fT
250
-
Cob
-
-
Max.
-
-
-
-50
-250
-400
-850
-950
-
-
300
-
-
-
4.5
Unit
Test Conditions
V
V
V
nA
mV
mV
mV
mV
MHz
pF
IC=-100uA
IC=-1mA
IE=-10uA
VCE=-30V, VBE=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100uA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification