HM3904 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE9504-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM3904 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCES Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6
-
ICEX
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1 650
-
*VBE(sat)2
-
-
*hFE1
40
-
*hFE2
70
-
*hFE3
100
-
*hFE4
60
-
*hFE5
30
-
fT
300
-
Cob
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
Test Conditions
V
V
V
nA
mV
mV
mV
mV
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCE=30V, VBE=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=100uA
VCE=1V, IC=1mA
VCE=1V, IC=10Ma
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification