HM3019 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE9526-A
Issued Date : 1998.07.01
Revised Date : 2000.10.01
Page No. : 1/2
HM3019
NPN EPITAXIAL PLANAR TRANSISTOR
Description
This device is designed for use as general purpose amplifier and
switching requiring collector currents 1A
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 140 V
VCEO Collector to Emitter Voltage ..................................................................................... 80 V
VEBO Emitter to Base Voltage ............................................................................................. 7 V
IC Collector Current .............................................................................................................. 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
140
-
BVCEO
80
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
50
-
*hFE2
90
-
*hFE3
100
-
*hFE4
50
-
*hFE5
15
-
fT
100
-
Cob
-
-
Max.
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
pF
IC=100uA
IC=30mA
IE=100uA
VCB=90V
VEB=5V
IC=150mA, IB=15mA
IC=150mA, IB=15mA
IC=0.1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=1000mA, VCE=10V
IC=50mA, VCE=10V, f=100MHz
VCE=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification