HM27 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HM27
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington transistor.
Spec. No. :HE9517-B
Issued Date : 1997.06.06
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCES Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol Min.
Typ.
BVCBO
60
-
BVCES
60
-
BVEBO
10
-
ICBO
-
-
IEBO
-
-
ICES
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
10K
-
*hFE2
10K
-
Max.
-
-
-
100
100
500
1.5
2
-
-
Unit
Test Conditions
V
IC=100uA
V
IC=100uA
V
IE=10uA
nA VCB=50V
nA VBE=10V
nA VCE=50V
V
IC=100mA, IB=0.1mA
V
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification