HM1426 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HM1426
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM1426 is designed for DC-DC converter.
Spec. No. :HE9518-B
Issued Date : 1997.06.17
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -20 V
VCES Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-20
-
BVCEO
-20
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-0.3
*hFE
160
260
fT
-
240
Cob
-
35
Max.
-
-
-
-100
-100
-0.5
390
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
MHz
pF
IC=-50uA
IC=-1mA
IE=-10uA
VCB=-20V
VEB=-5V
IC=-2A, IB=-100mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification