HM14 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE5908-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM14
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM14 is a darlington amplifier transistor designed for
applications requiring extremely high current gain.
Features
• High D.C current gain
• HM14 is complementary to HM64
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ....................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
30
-
BVCES
30
-
BVEBO
10
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
10K
-
*hFE2
20K
-
fT
125
-
Max.
-
-
-
100
100
1.5
2
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
IC=100uA, IE=0
IC=100uA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification