HM1300 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – SILICON PNP EPITAXIAL TYPE

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200202
Issued Date : 2002.02.01
Revised Date : 2002.08.15
Page No. : 1/3
HM1300
SILICON PNP EPITAXIAL TYPE
Description
• Strobo Flash Applications
• Medium Power Amplifier Applications
Features
• High DC Current Ogin and Excellanr hFE Linearity
• hFE(1)=140-1000, (VCE=-1V, IC=-0.5A)
• hFE(2)=60(Min.), (VCE=-1V, IC=-2A)
• Low Saturation Voltage
• VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA)
SOT-89
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Ratios
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCES
-20
VCEO
-10
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
DC
Pulsed (Note1)
IC
-2
ICP
-5
A
Base Current
IB
-0.2
A
Collector Power Dissipation
PC
1
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
-53~150
°C
Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Electrical Characteristics (Ta=25°C)
Characteristic
Symbol
Test Condition
Collector Cut-off Current
ICBO
VCE=-20V, IE=0
Emitter Cut-off Current
IEBO
VBE=-6V, IC=0
Collector – Emitter Breakdown Voltage V(BR)CEO
IC=10mA, IB=0
Emitter – Base Breakdown Voltage V(BR)EBO
IE=-1mA, IC=0
*DC Current Gain
hFE(1)(Note2)
hFE(2)
VCE=-1V, IC=-0.5A
VCE=-1V, IC=-2A
*Collector – Emitter Saturation Voltage VCE(sat)
IC=-2A, IB=-50mA
Base – Emitter Voltage
VBE
VCE=-1V, IC=-2A
Cutoff Frequency
FT
VCE=-1V, IC=-0.5A
Collector Output Capacitance
Cob
VCE=-10V, IE=0,
F=1KHz
Note 2: hFE(1) Classification Y:140~280, GR:200~400, BL:300~600, PE:500~1000
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Min. Typ. Max. Unit
- - -100 nA
- - -100 nA
-10 - - V
-6 - - V
140 - 1000
60 - -
- -0.3 -0.5 V
- -0.83 -1.5 V
- 140 - MHz
- 50 - pF
HM1300
HSMC Product Specification