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| HM117 Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HM117
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HM200101
Issued Date : 2001.07.30
Revised Date : 2004.12.21
Page No. : 1/5
Description
SOT-89
The HM117 is designed for use in general purpose amplifier and low-speed
switching applications.
Darlington Schematic
C
Absolute Maximum Ratings (TA=25°C)
B
⢠Maximum Temperatures
Storage Temperature ................................................................... -55 ~ +150 °C
Junction Temperature .......................................................... +150 °C Maximum
R1 R2
E
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W
Total Power Dissipation
(Printed circuit board 2mm thick, collector plating 1cm2 square or larger) ....................................................... 1.6 W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................................................... -100 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current (Continue) ............................................................................................................................ -4 A
IC Collector Current (Peak) .................................................................................................................................. -6 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
Typ.
Max.
-100
-
-
-100
-
-
-
-
-1
-
-
-2
-
-
-2
-
-
-2.5
-
-
-2.8
1
-
-
500
-
-
-
-
200
Unit
Test Conditions
V
IC=-1mA
V
IC=-30mA
mA
VCB=-100V
mA
VCE=-50V
mA
VEB=-5V
V
IC=-2A, IB=-8mA
V
IC=-2A, VCE=-4V
K
IC=-1A, VCE=-4V
IC=-2A, VCE=-4V
pF
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HM117
HSMC Product Specification
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