 English |
|
|
|
|
|
|
|
| HM112 Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
| |||
|
HI-SINCERITY
MICROELECTRONICS CORP.
HM112
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HM200102
Issued Date : 2001.07.30
Revised Date : 2002.10.08
Page No. : 1/5
Description
The HM112 is designed for use in general purpose amplifier and low-speed
switching applications.
SOT-89
Darlington Schematic C
Absolute Maximum Ratings (TA=25°C)
B
⢠Maximum Temperatures
Storage Temperature ................................................................... -55 ~ +150 °C
Junction Temperature .......................................................... +150 °C Maximum
R1
R2
E
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W
Total Power Dissipation
(Printed circuit board 2mm thick, collector plating 1cm2 square or larger) ....................................................... 1.6 W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage ....................................................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 100 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current (Continue) .............................................................................................................................. 4 A
IC Collector Current (Peak) .................................................................................................................................... 6 A
Thermal Characteristic
Symbol
Rθja
Characteristic
Thermal Resistance, junction to ambient (TA=25oC)
Max.
104
Unit
oC/W
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
Typ.
Max.
100
-
-
100
-
-
-
-
1
-
-
2
-
-
2
-
-
2.5
-
-
2.8
1
-
-
500
-
-
-
-
200
Unit
Test Conditions
V
IC=1mA
V
IC=30mA
mA
VCB=100V
mA
VCE=50V
mA
VEB=5V
V
IC=2A, IB=8mA
V
IC=2A, VCE=4V
K
IC=1A, VCE=4V
IC=2A, VCE=4V
pF
VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HM112
HSMC Product Specification
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese