HLB125E Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB125E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125E is designed for lighting applications and low switch-mode
power supplies. And it is high voltage capability and high switching speeds.
Features
TO-220
• High Speed Switching
• Low Saturation Voltage
• High Reliability
Internal Schematic Diagram
C
B
Absolute Maximum Ratings
E
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 40 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... 600 V
VCEO Collector to Emitter Voltage ................................................................................................ 400 V
VEBO Emitter to Base Voltage.......................................................................................................... 9 V
IC Collector Current (DC)................................................................................................................... 5 A
IC Collector Current (Pulse)............................................................................................................... 8 A
IB Base Current (DC)......................................................................................................................... 2 A
IB Base Current (Pulse) ..................................................................................................................... 4 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
600
-
BVCEO
400
-
BVEBO
9
-
ICES
-
-
ICEO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VCE(sat)3
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
8
-
*hFE2
10
-
Classification Of hFE1
Max.
-
-
-
100
100
0.5
0.7
1.1
1.1
1.2
35
-
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=10mA, IB=0
V
IE=10mA, IC=0
UA VCE=700V
uA VCE=400V
V
IC=1A, IB=0.2A
V
IC=2A, IB=0.4A
V
IC=3A, IB=0.75A
V
IC=1A, IB=0.2A
V
IC=2A, IB=0.4A
IC=2A, VCE=5V
IC=10mA, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE1
B1
8-17
B2
15-21
B3
19-25
B4
23-31
B5
29-35
HLB125E
HSMC Product Specification