HLB123T Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 1/3
HLB123T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123T is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ....................................................................................................... -50 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C) ................................................................................................. 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................ 600 V
BVCEO Collector to Emitter Voltage ............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC).................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=1mA, IE=0
BVCEO
400
-
-
V
IC=10mA, IB=0
BVEBO
8
-
-
V
IE=1mA, IC=0
ICBO
-
-
10
uA
VCB=600V, IE=0
IEBO
-
-
10
uA
VBE=9V, IC=0
*VCE(sat)1
-
-
0.8
V
IC=0.1A, IB=10mA
*VCE(sat)2
-
-
0.9
V
IC=0.3A, IB=30mA
*VBE(sat)1
-
-
1.2
V
IC=0.1A, IB=10mA
*VBE(sat)2
-
-
1.8
V
IC=0.3A, IB=30mA
*hFE1
10
-
50
IC=0.3A, VCE=5V
*hFE2
10
-
-
IC=0.5A, VCE=5V
*hFE3
6
-
-
IC=1A, VCE=5V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-42
B7
38-47
B8
43-50
HLB123T
HSMC Product Specification