HLB123I Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200202
Issued Date : 2002.06.01
Revised Date : 2002.06.10
Page No. : 1/4
HLB123I
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123I is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-251
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC) .................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
600
-
BVCEO
400
-
BVEBO
8
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
10
-
*hFE2
10
-
*hFE3
6
-
Ton
-
0.4
Tstg
-
2.4
Toff
-
0.3
Classification Of hFE1
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
1.1
4
0.7
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=10mA, IB=0
V
IE=1mA, IC=0
uA
VCB=600V, IE=0
uA
VBE=9V, IC=0
V
IC=0.1A, IB=10mA
V
IC=0.3A, IB=30mA
V
IC=0.1A, IB=10mA
V
IC=0.3A, IB=30Ma
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
uS
VCC=100V, IC=1A, IB1=IB2=0.2A
uS
VCC=100V, IC=1A, IB1=IB2=0.2A
uS
VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-42
B7
38-47
B8
43-50
HLB123I
HSMC Product Specification