HLB122J Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN Triple Diffused Planar Type High Voltage Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB122J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122J is a medium power transistor designed for use in
switching applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
TO-252
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current (DC) ............................................................................................... 800 mA
IC Collector Current (Pulse) ......................................................................................... 1600 mA
IB Base Current (DC) ..................................................................................................... 100 mA
IB Base Current (Pulse).................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
600
-
BVCEO
400
-
BVEBO
6
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
10
-
*hFE2
5
-
fT
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
Test Conditions
V IC=100uA
V IC=10mA
V IE=10uA
uA VCB=600V
uA VCE=400V
uA VEB=6V
mV IC=100mA, IB=20mA
mV IC=300mA, IB=60mA
V IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
uS VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB122J
HSMC Product Specification