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| HLB122D Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN Triple Diffused Planar Type High Voltage Transistor | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200206
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 1/4
HLB122D
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122D is a medium power transistor designed for use in switching
applications.
Features
⢠High breakdown voltage
⢠Low collector saturation voltage
⢠Fast switching speed
TO-126ML
Absolute Maximum Ratings (TA=25°C)
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
⢠Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current (DC) ............................................................................................................................... 800 mA
IC Collector Current (Pulse).......................................................................................................................... 1600 mA
IB Base Current (DC)...................................................................................................................................... 100 mA
IB Base Current (Pulse).................................................................................................................................. 200 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
tf
Min.
Typ.
Max.
600
-
-
400
-
-
6
-
-
-
-
10
-
-
10
-
-
10
-
-
400
-
-
800
-
-
1
10
-
40
10
-
-
-
-
0.6
Classification of hFE1
Unit
Test Conditions
V
IC=100uA
V
IC=10mA
V
IE=10uA
uA
VCB=600V
uA
VCE=400V
uA
VEB=6V
mV
IC=100mA, IB=20mA
mV
IC=300mA, IB=60mA
V
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
uS
VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
Rank
Range
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-40
HLB122D
HSMC Product Specification
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