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| HLB120S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN Triple Diffused Planar Type High Voltage Transistors | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HLB120S
NPN Triple Diffused Planar Type High Voltage Transistors
Spec. No. : HA200204
Issued Date : 2002.02.01
Revised Date : 2005.02.05
Page No. : 1/4
Description
The HLB120S is a medium power transistor designed for use in switching
applications.
Features
⢠High Breakdown Voltage
⢠Low Collector Saturation Voltage
⢠Fast Switching Speed
TO-92
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Total Power Dissipation (TC=25°C) ...................................................................................................................... 7 W
⢠Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ......................................................................................................................... 500 V
VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V
VEBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current (DC) ............................................................................................................................... 100 mA
IC Collector Current (Pulse)............................................................................................................................ 200 mA
IB Base Current (DC)........................................................................................................................................ 20 mA
IB Base Current (Pulse).................................................................................................................................... 40 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min.
Typ.
Max
500
-
-
400
-
-
6
-
-
-
-
10
-
-
10
-
-
10
-
-
400
-
-
750
-
-
1
8
-
-
10
-
36
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=10mA, IB=0
V
IE=10uA, IC=0
uA
VCB=450V
uA
VCE=400V, IB=0
uA
VEB=6V, IC=0
mV
IC=50mA, IB=10mA
mV
IC=100mA, IB=20mA
V
IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HLB120S
HSMC Product Specification
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