HJ882 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6014
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 1/4
HJ882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ882 is designed for using in output stage of 20 W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-252
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................. 40 V
BVCEO Collector to Emitter Voltage ............................................................................................... 30 V
BVEBO Emitter to Base Voltage ....................................................................................................... 5 V
IC Collector Current (DC)................................................................................................................... 3 A
IC Collector Current (Pulse)............................................................................................................... 7 A
IB Base Current (DC).................................................................................................................. 600 mA
Thermal Characteristic
Characteristic
Thermal Resistance, junction to case
Symbol
Rθjc
Max
12.5
Unit
o_C/W
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
30
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.3
*VBE(sat)
-
1
*hFE1
30
-
*hFE2
160
-
fT
-
90
Cob
-
45
Max.
-
-
-
1
1
0.5
2
-
400
-
-
Classification Of hFE1
Rank
Range
Q
100-200
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
P
160-320
E
250-500
HJ882
HSMC Product Specification