HJ772 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6015
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 1/4
HJ772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ772 is designed for using in output stage of 20 W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-252
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. -40 V
BVCEO Collector to Emitter Voltage .............................................................................................. -30 V
BVEBO Emitter to Base Voltage ...................................................................................................... -5 V
IC Collector Current (DC)................................................................................................................. -3 A
IC Collector Current (Pulse)............................................................................................................. -7 A
IB Base Current (DC)................................................................................................................ -600 mA
Thermal Characteristic
Characteristic
Thermal Resistance, junction to case
Symbol
Rθjc
Max.
12.5
Unit
o_C/W
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-40
-
BVCEO
-30
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-0.3
*VBE(sat)
-
-1
*hFE1
30
-
*hFE2
100
-
fT
-
80
Cob
-
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Classification Of hFE1
Rank
Range
Q
100-200
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=-1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
P
160-320
E
250-500
HJ772
HSMC Product Specification