HJ669A Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HJ669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ669A is designed for low frequency power amplifier.
Spec. No. : HE6830-A
Issued Date : 1994.01.25
Revised Date : 2000.11.01
Page No. : 1/2
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 180 V
BVCEO Collector to Emitter Voltage................................................................................. 160 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ........................................................................................................... 1.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
180
-
BVCEO
160
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
14
Classification Of hFE1
Rank
Range
B
60-120
Max.
-
-
-
10
1
1.5
200
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=1mA
IC=10mA
IC=1mA
VCB=160V
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
C
100-200
HSMC Product Specification