HJ667A Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HJ667A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ667A is designed for low frequency power amplifier.
Spec. No. : HE6830-A
Issued Date : 1994.01.25
Revised Date : 2000.11.01
Page No. : 1/2
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -120 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-120
-
BVCEO
-100
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
12
Classification Of hFE1
Rank
Range
B
60-120
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-100uA
IC=-1mA
IC=-10uA
VCB=-100V
IC=-500mA, IB=-50mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
C
100-200
HSMC Product Specification