HJ42C Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6013-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
HJ42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ42C is designed for use in general purpose amplifier, low
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................ -6 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-100
-
BVCEO
-100
-
BVEBO
-5
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
30
-
*hFE2
15
-
fT
3
-
Max.
-
-
-
-10
-50
-500
-1.5
-2
-
75
-
Unit
Test Conditions
V
V
V
uA
uA
uA
V
V
MHz
IC=-1mA, IE=0
IC=-30mA, IB=0
IC=-100uA, IC=0
VCE=-100V, VEB=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-6A, IB=-600mA
VCE=-4V, IC=-6A
VCE=-4V, IC=-300mA
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification