HJ3953 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6021-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HJ3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High-definition CRT display video output, wide-band amp,
Features
• High fT: fT =400MHz
• High breakdown voltage: VCEO=120V (min)
• Small reverse transfer capacitance and excellent HF response
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.3 W
• Maximum Voltages and Currents
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVCBO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage ........................................................................................... 3 V
IC Collector Current (DC)............................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
120
-
BVCEO
120
-
BVEBO
3
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
60
160
*hFE2
40
-
fT
400
-
Cob
2.1
-
Classification Of hFE1
Max.
-
-
-
100
100
1
1
320
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=80V, IE=0
VEB=2V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=50mA
VCB=30V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification